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| HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C IXFR 4N100Q VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 trr 200ns Maximum Ratings 1000 1000 20 30 3.5 16 4 20 700 5 80 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A mJ mJ V/ns W C C C C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain * Patent pending Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.0 V 100 nA TJ = 25C TJ = 125C 50 A 1 mA 3.0 Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly Space savings High power density VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 1.5 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 (c) 2002 IXYS All rights reserved DS98860A(12/02) IXFR 4N100Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Notes 2, 3 1.5 2.5 1050 VGS = 0 V, VDS = 25 V, f = 1 MHz 120 30 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 2 (External), Notes 2, 3 15 32 18 39 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT Notes 2, 3 9 22 1.57 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 Q R Dim. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ISOPLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Note 1 IF = IS, VGS = 0 V, Notes 2, 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 16 1.5 250 A A V ns C A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 See IXFH4N100Q data sheet for Characterisitic curves. IF = 50A,-di/dt = 100 A/s, VR = 100 V 0.52 1.8 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 % 3. IT = 2 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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